Advances in nanodevices and nanofabrication : selected by Qing Zhang, W. I. Milne PDF

By Qing Zhang, W. I. Milne

ISBN-10: 9814364541

ISBN-13: 9789814364546

A number of units at nanometer/molecular scale for digital, photonic, optoelectronic, organic, and mechanical functions were created throughout the fast improvement of fabrics and fabrication know-how. additional improvement of nanodevices strongly is determined by the cutting-edge wisdom of technology and know-how on the sub-100 nm scale. This booklet provides and highlights a few of the key advances on, yet now not constrained to, digital and optoelectronic units of nanometer/molecular scale, nanomechanics and nanoelectromechanical platforms, electromechanical coupled units, manipulation and aligning techniques at nanometer/molecular scale, quantum phenomena, modeling of nanodevices and nanostructures, fabrication and estate characterization of nanodevices, and nanofabrication with centred beam know-how.

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Extra resources for Advances in nanodevices and nanofabrication : selected publications from Symposium of Nanodevices and Nanofabrication in ICMAT2011

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It also offers the precise control of the width (sub-100 nm), results in smooth and straight sidewalls, and requires a room temperature etching and a single mask process. The main essential point in this technique is controlling the width of SiNWs via etching time. With a very slow etch rate, good control on the final dimension is possible. The SiNWs are defined using conventional lithography and anisotropic wet etching on a (100) SOI wafer. 14. 2 µm and a length of 5 µm. 14a. Then, the wafer is immersed in etchant (AZ400K developer) © 2012 by Taylor & Francis Group, LLC Top-Down Approaches at room temperature for 75 minutes.

The etch rate of oxide in hydrofluoric acid is known and controllable [72]. A thin layer of chromium (Cr) is then electron-beam evaporated at 45 degrees with respect to the substrate. Excessive evaporated metal outside the cavity is trimmed using ion beam milling at –45 degree. The remaining SiO2 and SiN layers are then removed by etching and the earlier deposited metal inside the cavity is not removed or altered. The SiNW is formed when RIE etching is carried out with the pre-defined metal hard mask.

Nair and M. A. Alam, “Design considerations of silicon nanowire biosensors,” IEEE Transactions on Electron Devices, vol. 54, pp. 3400– 3408, 2007. [80] R. J. Niklas Elfström, Ilya Sychugov, Torun Engfeldt, Amelie Eriksson Karlström, and Jan Linnros, “Surface Charge Sensitivity of Silicon Nanowires: Size Dependence,” Nano Letters, vol. 7, pp. 2608–2612, 2007. [81] B. P. , “Electrical recording from hearts with flexible nanowire device arrays,” Nano letters, vol. 9, pp. 914–918, 2009. © 2012 by Taylor & Francis Group, LLC 39 40 Fabrication of Nanowires for Biosensing Applications [82] G.

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Advances in nanodevices and nanofabrication : selected publications from Symposium of Nanodevices and Nanofabrication in ICMAT2011 by Qing Zhang, W. I. Milne

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